An Accurate Analytical Model Of The Algaas/Gaas High Electron Mobility Transistor (Hemt)

A new and accurate analytical model for the AlGaAs/GaAs high electron mobility transistor (HEMT) or MODFET is presented. This model uses a polynomial expression to model the dependence of sheet carrier concentration (n(s)) in the two-dimensional election gas on gate voltage (V-G). It takes into account the parasitic conduction in the AlGaAs layer by including a MESFET operation, It also includes the effects of the extrinsic source and drain resistances.Based on this model, analytical drain current-voltage equations suitable for computer simulation are derived. Calculated results show excellent agreement with measured characteristics, much closer than previous other models.