Finite Element Analysis Of Electromigration And Stress In Interconnects

We have developed two and three dimensional finite element methods to predict the behavior of voids in interconnect lines. Our method of analysis is reviewed briefly, and some applications are described. These include: two dimensional simulations of the stresses induced in a polycrystalline interconnect due to grain boundary electromigration; two and three dimensional simulations of void migration in an electric field; and two dimensional simulations of electromigration and stress induced hillock formation on an unpassivated surface.