New Via Formation Process For Suppressing The Leakage Current Between Adjacent Vias For Hydrogen Silicate Based Inorganic Sog Intermetal Dielectric

Naoki Oda,Tatsuya Usami,T Yokoyama,Akio Matsumoto,K Mikagi,Hiroaki Gomi,I Sakai

PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE（1998）

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Abstract

The leakage current between the adjacent vias in case of Hydrogen Silicate Based Inorganic Spin-on Glass (HSI-SOG) intermetal dielectric (IMD) is investigated for 0.6 mu m pitch multilevel interconnection with borderless vias. We propose a new via formation process using an NH3 plasma treatment to decrease this leakage current by protecting the sidewalls of the vias. The leakage level is considerably suppressed by this NH3 plasma treatment. Dielectric constant of HSI-SOG is maintained to be low. This technology is essential to high-performance sub-quarter micron CMOS devices with HSI-SOG IMD.

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Key words

dry etching,hydrogen,dielectric constant,spin on glass,permittivity,resists,plasma stability,leakage current,cmos integrated circuits,glass,spin coating

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