Alinas/Gainas Mhemts On Silicon Substrates Grown By Mocvd

Metamorphic Al(0.50)In(0.50)As/Ga(0.47)In(0.53)As high electron mobility transistors (mHEMT) grown by Metalorganic Chemical Vapor Deposition (MOCVD) on silicon substrates have been successfully demonstrated for the first time. The grown structures exhibited 2-DEG mobilities over 4500 lcm(2)/V-s, with sheet carrier densities larger than 8 x 10(12) cm(-2) at room temperature. A 1.0-mu m transistor exhibits a maximum transconductance of 587mS/mm. The cut off and maximum oscillation frequencies were 32.3 and 44GHz, respectively.