Collaborative work on reducing the intersite gaps in outgassing qualification

Proceedings of SPIE(2015)

引用 3|浏览31
暂无评分
摘要
This paper reports on an all-out effort to reduce the intersite gap of the resist outgassing contamination growth in the results obtained under the round-robin scheme. All test sites collaborated to determine the causes of such gaps. First, it was determined that wafer temperature during exposure could impact the amount of contamination growth. We discovered a huge intersite gap of wafer temperatures among the sites by using a wafer-shaped remote thermometer with wireless transmitting capability. Second, whether the contamination-limited regime was attained during testing could have been another primary root cause for such a difference. We found that for one of the model resists whose protecting unit had lower activation energy and molecular weight the contamination-limited regime was insufficient at one test site. Third, the ratio of the exposed area to pumping speed is necessary to equalize contamination growth. We validated the effect of matching the ratio of exposure area to pumping speed on reducing the intersite gap. This study and the protocols put in place should reduce the intersite gap dramatically.
更多
查看译文
关键词
EUV,lithography,resist,outgas,contamination
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要