Electrical/Themoelectric characterization of electrodeposited BixSb2-xTe3 thin films

BixSb2-xTe3 films were potentiostatically electrodeposited from acidic nitric baths at room temperature by controlling electrodeposition parameters (i.e. applied potential). Near stoichiometric BixSb2-xTe3 thin films were obtained at applied potentials between -0.10 and -0.15 V versus saturated calomel electrode (SCE). Electrical and thermoelectric property of as-deposited films was degraded with more negative deposition potential, which might be attributed to greater defect density. Post-annealing process in the reducing environment improved electrical and thermoelectric properties possibly due to decrease in antistructure.