Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): Effect of QD size, indium composition and nitrogen incorporation

C Robert,C Cornet,K Pereira Da Silva,P Turban,S Mauger,T Nguyen Thanh,J Even,J M Jancu, M Y Perrin,H Folliot,T Rohel,Sylvain Tricot,A Balocchi,P Barate,X Marie,P M Koenraad,M I Alonso, A R Goi,N Bertru,O Durand,A Le Corre

Indium Phosphide and Related Materials（2013）

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Abstract

The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.

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Key words

iii-v semiconductors,gallium arsenide,gallium compounds,indium compounds,photoluminescence,scanning tunnelling microscopy,semiconductor quantum dots,tight-binding calculations,time resolved spectra,wide band gap semiconductors,(inga)as(n)-gap,cross scanning tunneling microscopy,ground optical transition,indium composition,mixed k.p-tight-binding simulations,nitrogen incorporation,pressure dependent photoluminescence,quantum dots,structural properties,time-resolved photoluminescence,scanning tunneling microscopy,indium,silicon,nitrogen,optical imaging

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