Effect Of Pressure On The Electronic Properties Of Carbon Nanotubes

Yu I Prylutskyy,O V Ogloblya,E V Buzaneva,Sergiy Putselyk,Peter C Eklund,P Scharff

ELECTRONIC PROPERTIES OF NOVEL MATERIALS-MOLECULAR NANOSTRUCTURES（2000）

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Abstract

The effect of pressure on the band gap for single-walled carbon nanotubes (SWCNT) has been calculated using the molecular dynamics approach, It was found that under the uniaxial homogeneous deformation of semiconductor SWCNT the gap varies linearly with pressure and strongly dependent on their chiral symmetry. An analytical expression for the determination of value of pressure characterizing the transition between semiconductor and metallic behavior was obtained and analysed in detail.

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Key words

carbon nanotube,band gap,molecular dynamic

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