Oxide and Interface Charge Generation by Electron Injection in MOS Devices

F J Feigl,Deborah Rohm Young,D J Dimaria,S Lai

mag（1981）

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摘要

The development of charge within the oxide layer of an MOS structure, during transport of an electron current across the oxide layer, is illustrated in Figure 1.

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关键词

Flat Band, Si02 Film, Oxide Trap Charge, Flat Band Voltage Shift, Trap Electron Center

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