Phonon Frequencies and Thermal Expansion of III-V Compounds

Thermal expansion is an important parameter for the design and manufacturing of dimensionally thermally stable opto-electronic integrated circuits and superlattices. In earlier work 1 , 2 we established the quantitative relationships between phonon frequencies and thermal expansion for Group IV semiconductors. In this paper we extend this approach to the III-V compounds GaAs, GaP, InP, GaSb, InAs, AlSb and InSb.