High-Density 3-D Metal-Fuse Prom Featuring 1.37 Mu M(2) 1t1r Bit Cell In 32nm High-K Metal-Gate Cmos Technology

A 4Kbit high-density PROM array design featuring a high-volume manufacturable metal-fuse technology in 32nm high-k metal-gate CMOS is introduced. In contrast to a traditional salicided polysilicon based 2-D fuse cell, the metal-fuse technology enables a 3-D cell topology with program device and fuse element stacked on each other, achieving a 1.37 mu m(2) cell footprint. The 128-row by 32-column array with an asymmetric tunable static sense scheme can operate down to 0.5V and provides multi-bit programming capability. A 100% programming success rate at 2V-1 mu s condition is achieved along with security protection.