Resistive Switching In Au/Bifeo3/La0.6sr0.4mno3 Heterostructures

The ferromagnetically coupled ferroelectric domain walls (DWs), which may be more conductive, in multiferroic material BiFeO 3 (BFO), make it possible to realize intrinsic multiferroelectricity in single phase material and open a chance for combining spintronics and ferroelectricity in multifer-roic systems.[1] From the aspect of conductivity, the conductive DWs will influence the macroscopic transport of ferroelectric materials, and thus be coupled with ferroelectric resistive switching, which arises from the modulation of band alignment and contact resistance in the interface between ferroelectric and electrode layers when ferroelectric polarization is switched. In the present work, a room temperature resistive switching behavior of Au/BiFeO 3 /La 0.6 Sr 0.4 MnO 3 (BFO/LSMO) heterostructures accompanied with DWs conductance effect is reported.