Source-Pull And Multiharmonic Load-Pull Measurements Based On Sixport Techniques

Gerald Berghoff,Olivier Gibrat,Eric Bergeault,Bernard Huyart,Louis Jallet

1998 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS DIGEST（1998）

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摘要

An original measurement system for nonlinear microwave power transistor characterization, using sixport reflectometers, is presented. It allows independent active tuning of the output impedances at f(o) and 2f(o) (multiharmonic Load-Pull) and variation of the source impedance at the input port at f(o) (Source-Pull). Experimental results are shown for a commercial GaAs MESFET power transistor.

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关键词

gallium arsenide,power added efficiency,power transistors,reflection,impedance,measurement system,gaas,switches

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