Progress on heterogeneous integration: Devices and processes

J M Dallesasse,Brenda S Kesler, P L Lam, G Walter

2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)(2015)

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摘要
The heterogeneous integration of compound semiconductors with silicon has been widely studied because of its potential for bringing photonic functionality and improved high-speed performance onto a semiconductor platform with a significant installed manufacturing base. Progress on heterogeneous integration processing methods and devices will be reviewed, and novel methods involving epitaxial transfer and photolithographic optical alignment as a vehicle for producing CMOS-scale electronic-photonic integrated circuits will be discussed. Progress on novel devices such as the light-emitting transistor as a fundamental circuit element for mixed electronic-photonic processing cores will also be presented.
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关键词
Integrated optoelectronics,optoelectronic devices,silicon photonics,semiconductor materials,III-V semiconductor materials,silicon,nanofabrication
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