Radiation-Acoustic Treatment Of Gallium Phosphide Light Diodes

The ultrasound influence on the defects of technological and radiation origin of GaP light diodes has been investigated. GaP light diodes were treated by ultrasound wave (oscillation power 1W/cm(-2), frequencies - 1-5 MHz) in different operating modes. Electroluminescence spectra were measured at room and low (77 K-0) temperatures, integrated luminosity of devices was checked by solar cell, in order to find out the radiation field influence on nonequilibrium defects of acoustic origin samples were irradiated at room temperature by gamma rays of Co-60 (D=10(4)Rad). It has been discovered that in GaP light diodes treated by ultrasound unstable at room temperature dislocation networks occur at the volume of crystal. Ultrasound dose increase causes the creation of complex defects with high relaxation time and appearing of a part of more mobile defects, which relax quicker. The nature of effects discovered has been discussed. The method of the emissive capacity restoring of samples degraded after irradiation have been proposed.