Minimum-energy point design in FDSOI Regular-Vt

Lauri Koskinen,Markus Hiienkari,Matthew Turnquist,Philippe Flatresse

2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)（2015）

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摘要

FDSOI has been shown to achieve extremely high performance at low operating voltages: a use-case extremely well suited for applications such as mobile processing. In IoT and Dark Silicon, use cases with extremely low application active times per standby times can be found. Investigated here are the turnover points where the higher threshold voltage and longer channel length options of FDSOI should be used. It was found that for activity factors below 3.2% to 0.5%, depending on the voltage, the Regular V _T option of FDSOI should be used.

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关键词

minimum-energy point design,FDSOI,mobile processing,IoT,dark silicon,threshold voltage,channel length options,activity factors,regular VT option,Internet of Things,low operating voltages,turnover points

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