Enhancement/Depletion-Mode Algan/Gan Hemts Demonstration Using Partial P-Type Gan Gate Etching Process
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)（2015）
Key words
enhancement mode HEMT,depletion mode HEMT,p-type GaN gate etching process,GaN HEMT,semiconductor procedure,pulse measurement,voltage 0.8 V,AlGaN-GaN,Mg-GaN
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined