Plasma Enhanced OMCVD Atomic Layered Growth of Y-BA-CU Oxide Films

We report the results of a pulsed organo-metallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10−4 − 10−2 torr) and low substrate temperature (600 to 700 C) using organo-metallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organo-metallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5K] and Jc (77K, 50K gauss) = 1.1×105 A/cm2 } is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in-situ processing of multilayer structures (e.g. junctions).