High Brightness, Large Scale Gan Based Light-Emitting Diode Grown On 8-Inch Si Substrate

A crack-free, uniform InGaN/GaN light-emitting diode (LED) structure with strain-engineered buffer layer was grown on an 8-inch diameter Si(111) substrate. The full width at half maximum (FWHM) of (002) and (102)omega-scan is 280 and 420 arcsec, respectively. For LED on 8-inch Si, multiple quantum well (MQW) photoluminescence (PL) wavelength uniformity of 0.55% (2.4 nm) has been achieved by using proper curvature engineered wafer carrier. We demonstrated high brightness 1x1 mm(2) LED devices utilizing vertical chip process then evaluated their device properties. The electro-optical characteristics of the fabricated vertical LED (VLED) shows around 1 W light output power at 1 A injection current with operating voltage of 4.0 V. (C) The Author(s) 2015. Published by ECS. All rights reserved.