Passivation of AlN/GaN HEMTs Using Ozone TreatmentChangfa Lo,Chih Chang,S J Pearton,I Kravchenko,A M Dabiran,A M Wowchak,B Cui,P P Chow, F Renmag(2010)引用 23|浏览26暂无评分关键词high electron mobility transistor,leakage current,ozone,schottky diode,breakdown voltageAI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要