The Effects of Multiple Scattering on Performance of Ballistic Channel Strained-Si Diodes

We have investigated the effects of multiple scattering on electron velocity, current and energy in the drain regions of the Strained-Si diodes. The covered cases in this study are ballistic channel Si-diodes with strained channel or drain, and with strained channel and drain, respectively. For a selected Ge content, the simulation results show that the velocity of electrons in the drain regions of strained channel and drain is lower than that of strained drain at the lower bias voltages (Vd <0.5V). At the higher bias voltages (Vd >0.5V), the velocity in the drain regions of strained channel and drain regions is lower than that of strained drain regions. Meanwhile, the velocity of electrons in the drain regions of ballistic channel diodes with strained channel and drain reduces due to optical phonon scattering, when bias voltage increases.