A 0.6-1.2 Thz Monolithic Imaging Array
international conference on infrared, millimeter, and terahertz waves(2015)
摘要
A 19x8 pixel array with a read-out integrated circuit was designed and fabricated in a micro-machined SOI-CMOS process. The pixels are antenna-coupled MOSFET holometers operating at room temperature in a wide 0.6-1.2 TElz band. The read-out circuit features column multiplexed differential amplifiers, offset calibration capability and chopper stabilization.We present the performance of the read-out circuit building blocks, as well as characterization results of the pixels, which demonstrate good detection sensitivity.
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关键词
monolithic imaging array,readout integrated circuit design,micromachined SOI-CMOS process,antenna coupled MOSFET bolometer,column multiplexed differential amplifier,offset calibration capability,chopper stabilization,readout circuit building blocks,pixel array,readout integrated circuit fabrication,frequency 0.6 THz to 1.2 THz
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