Mask defect specification in the spacer patterning process by using a fail-bit-map analysis
Proceedings of SPIE, the International Society for Optical Engineering(2009)
摘要
We obtained the acceptable mask defect size for both opaque and clear defects in the spacer patterning process using the
fail-bit-map analysis and a mask with programmed defects. The spacer patterning process consists of the development of
photoresist film, the etching of the core film using the photoresist pattern as the etching mask, the deposition of a spacer
film on both sides of the core film pattern, and the removal of the core film. The pattern pitch of the spacer film becomes
half that of the photoresist. Both the opaque defect and the clear defect of the mask resulted in a short defect in the spacer
pattern. From the fail-bit-map analysis, the acceptable mask defect size for opaque and clear defects was found to be
80nm and 120nm, respectively, which could be relaxed from that in ITRS2008. The difference of the acceptable mask
defect size for opaque and clear defects comes from the difference of the defect printability at the resist development.
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关键词
opacity,etching
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