Growth of AlN nanostructure on GaN using MOCVD
AIP Conference Proceedings(2015)
Abstract
Aluminum nitride (AlN) nanowalls have been epitaxially grown on dislocation assisted GaN/Al2O3 template by metal organic chemical vapor deposition (MOCVD) without any help of metal catalysts. A large number of nanowalls with thicknesses of 1.5-2.0 mu m and height 400 nm have been deposited. The AlN nanowalls were found to have a preferred c-axis oriented with a hexagonal crystal structure. The AlN nanowalls and GaN/Al2O3 template have been characterize at room temperature photoluminescence (PL) and high resolution X-ray diffraction (HRXRD).
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Key words
Aluminium Nitride,Nanowalls,MOCVD,Gallium Nitride
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