Hetero-Epitaxy Of Iii-V Compounds Lattice-Matched To Inp By Mocvd For Device Applications

Chak Wah Tang,Haiou Li,Zhenyu Zhong, Kai Lun Ng,Kei May Lau

2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)（2009）

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摘要

Device quality Al0.49In0.51As/Ga0.47In0.53As MHEMT structures have been grown by MOCVD on GaAs substrates, with 2-DEG mobility over 8700 cm(2)/V-s and sheet carrier density at around 4 x 10(12) cm(-2). A 150 nm T-gate transistor demonstrated unity current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max))of 279 and 231 GHz, respectively.

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关键词

Metamorphic HEMT,MOCVD,MHEMTs,AlInAs/GaInAs,LT buffer

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