Zrbo Dielectrics For Tsv Production Process

Masanobu Hatanaka, Akihiro Shibata,Masamichi Harada, Satoru Toyoda,Michio Ishikawa,Koukou Suu

2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM)（2011）

引用 0|浏览11

暂无评分

摘要

Dielectric films of ZrBO were grown using thermal-CVD Zr(BH4)(4)-O-2 gas system. Oxygen gas was activated by microwave to produce its radical. The grown film showed high barrier properties for Cu diffusion with a thickness of 50 nm. Typical side step coverage was over 60% for a 45-mu m-deep and 7.5-aspect-ratio TSV with a high coverage of 67% at the bottom. We report ZrBO-CVD mechanism related to the coverage.

查看译文

关键词

dielectric constant,copper,films,production process,chemical vapour deposition

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要