Atomic Level 1D Structural Modulations at the Negatively Charged Domain Walls in BiFeO3 Films

ADVANCED MATERIALS INTERFACES(2015)

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摘要
Charged domain walls (CDWs) show great potentials to mediate the properties of ferroelectrics. Direct mapping of these domain walls at an atomic scale is of critical importance for understanding the domain wall dominated properties. Here, based on aberration-corrected scanning transmission electron microscopy, tail-to-tail CDWs at 71 degrees, 109 degrees, and 180 degrees domains in BiFeO3 thin films have been identified. 2D mappings demonstrate 1D structural modulations with alternate lattice expansions and clockwise/counterclockwise lattice rotations at these CDWs. Such behaviors of CDWs reveal a remarkable contrast to the uncharged domain walls and imply delicate interactions between bound charges and structural compensations of domain wall. These results are expected to provide new information on domain wall structures and shed some light on the understanding of domain wall properties in ferroelectrics.
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关键词
Domain Wall Nanoelectronics,Domain Walls,Thin Film Ferroelectrics
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