Effect of Top Gate Bias on NBIS in Dual Gate A-Igzo TFTs
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)（2015）
关键词
top gate bias,NBIS,dual gate a-IGZO TFT,negative bias illumination stress,bottom gate terminal,thin film transistor,transfer characteristics,negative transfer shift,oxygen vacancies,Fermi level,voltage -3.26 V
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