MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications

This research work demonstrates, for the first time, that the material quality of MOVPE III–V QWFET structures on Si can be matched to that of the best MBE III–V QWFET structures on Si. The MOVPE grown In 0.53 Ga 0.47 As QW layer on Si exhibits high Hall mobility of ∼8000cm2/V-s at 300K, matching that obtained by MBE growth on lattice matched InP (the “gold standard”).