Dual Silicide SOI CMOS Integration with Low-Resistance PtSi PMOS Contacts

S Zollner,P Grudowski,A Thean,D Jawarani,Gauri V Karve,T R White,Scott Bolton, H Desjardins,Masud H Chowdhury, Kyuhwan Chang,M Jahanbani,R Noble,L Lovejoy,M Rossow,D Denning,D Goedeke, Stanley M Filipiak,R Garcia,M Raymond,V Dhandapani,Da Zhang,Laegu Kang,P Crabtree, Xi Zhu,M Kottke,R B Gregory,P Fejes,X D Wang,D Theodore,W Taylor,Bichyen Nguyen

2007 IEEE International SOI Conference（2007）

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摘要

We demonstrate a dual silicide integration on a SOI CMOS platform with robust low-resistance PtSi PMOS contacts. Compared to NiSi, the specific contact resistivity is reduced in PtSi contacts to p-type Si and increased in contacts to n-type Si. PMOS linear and saturation drive current enhancements of 6% and 9%, respectively, were achieved with PtSi relative to baseline NiSi source/drain contacts.

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关键词

dual silicide SOI CMOS integration,low-resistance PMOS contacts,contact resistivity,saturation drive current enhancement,source-drain contacts,PtSi,NiSi

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