Studies Of Electron And Hole Velocity Overshoots In A Gaas-Based P-I-N Semiconductor Nanostructure By Picosecond Raman Spectroscopy

Velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure have been studied by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to holes. These experimental results have been explained in terms of various carrier scattering processes.