Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC

Jin S.,Bender H.,Donaton R. A., Maex K.,Vantomme A.,Langouche G.,Amour A. St.,Sturm J. C.

CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES（2012）

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摘要

Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

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co silicide layers,sige

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