A 250 mV Bit-Line Swing Scheme for 1-V Operating Gigabit Scale DRAMs (Special Issue on Low-Power LSI Technologies)Tsuneo Inaba,Daisaburo Takashima,Yukihito Oowaki,Tohru Ozaki,Shigeyoshi Watanabe,Takashi Ohsawa,Kazunori Ohuchi,Hiroyuki Tangomag(1996)引用 22|浏览14暂无评分关键词sense amplifier,reliability,threshold voltageAI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要