Collective Tunneling Model between Two‐Dimensional Electron Gas to Si‐Nano Dot

We study the temperature dependence of electron injection voltage in Si-Nano-Dot (Si-NDs) Floating Gate MOS capacitor by using the collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the temperature dependence by numerical calculation, which emulate the experiment in this system, and we obtained a new insight into the origin of the temperature dependence. We have revealed that the collective tunneling model can reproduce the temperature dependence of electron tunneling.