Highly Thermally Stable And Reproducible Of Ald Ruo2 Nanocrystal Floating Gate Memory Devices With Large Memory Window And Good Retention

Highly thermally stable (similar to 1000 degrees C) and reproducible of ALD RuO2 nanocrystal floating gate memory devices with a large hysteresis memory window of Delta V approximate to 14.6V under a gate voltage of +/- 10V have been observed. The memory window of Delta V approximate to 4.2V under a small gate voltage of +/- 3V is also observed. Both program and erase speeds of Delta V-FB>1V@100 mu s are achieved under Fowler-Nordheim injections. Excellent endurance of Delta V approximate to 8.5V, before and after 10(4) cycles and a large memory window of Delta V approximate to 4.9 V after 10 years of retention (9% charge loss at 20 degrees C and similar to 20% charge loss at 85 degrees C) are obtained. The high-performance ALD RuO2 nanocystal flash memory devices can be operated below 5V.