GaSb Structures with Quantum Dots in Space Charge Region

In the paper, an attempt is described to increase conductivity and to exclude the effect of the tunnel junction on the multi-junction solar cells (MJSC) characteristics. Investigations have been carried out on creation of pn and p-n junctions, as connecting elements in a MJSC, in the space charge region (SCR) of which a layer of quantum dots (QD) is introduced. Epitaxial GaSb based structures were fabricated by the MOCVD technique. In p-n junctions with quantum dots, a significant (by three orders of magnitude) increase of the forward current has been observed, which can be explained by formation the local channels for the charge carrier flow. It has been observed the reduction of the resistance of the I-V characteristic forward branch in p-n junctions with QDs more than in 2 times compared with that in p-n junctions without QDs.