Ultrathin Gaas Solar Cells With A Nanostructured Back Mirror

2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)(2015)

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摘要
We have designed and fabricated ultra-thin (t=120-220nm) GaAs solar cells. Multi-resonant light trapping is achieved with a nanostructured silver back mirror. The short-circuit current predicted by numerical calculations is Jsc=24.9mA/cm(2) for t=220nm. The nanostructured silver mirror is combined with localized ohmic contacts. Ultra-thin GaAs solar cells are patterned by soft nano-imprint lithography and transferred on a glass substrate. Short-circuit currents above 21mA/cm(2) have been measured on 220nm-thick solar cells.
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关键词
light-trapping,plasmonics,thin film,GaAs,photovoltaic cells
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