Broadband Class-E Power Amplifier For Space Radar Application

T Quach,Peter H Watson,W Okamura,E Kaneshiro,Augusto Gutierrezaitken,T Block, Jonathan D Eldredge,T Jenkins,L Kehias,A K Oki,Donald Sawdai,Richard Welch, Robert D Worley

GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001（2001）

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摘要

We report on a broadband high efficiency power amplifier using Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier demonstrated a record bandwidth for a Class-E power amplifier at X-Band. This circuit achieved 49-58% PAE, 18.5-23.9 dBm output power, and 9.6-10.5 dB gain across 9-11 GHz.

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关键词

power amplifier

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