Nanostructure Of Hot-Wire-Deposited A-Sige : H Alloys By Small-Angle X-Ray Scattering

A series of a-Si1-xGex:H alloys with 0 less than or equal to x less than or equal to 1 has been prepared by the hot-wire chemical-vapor deposition method and characterized by the small-angle x-ray scattering technique, All samples an inhomogeneous on a nanometer scale with a significant increase in the amount of heterogeneity above x=0.1 and this correlates with degraded opto-electronic properties. Oriented features detected in the nanostructure an associated with a directed flux of deposition species from the heated filament.