A Low-Cost SiGe:C BiCMOSTechnology withEmbedded Flash MemoryandComplementary LDMOSModule

We present a low-cost, modular BiCMOS process for wireless and mixed-signal applications. A SiGe:C bipolar module, a complementary LDMOS module, and a low-power flash memory were combined with a 0.25 mu m CMOS technology to enable SoC integration. The low-cost approach is demonstrated by the fact that only 29 mask steps are applied in total for the full process flow including all modules, a full suite of passives, and 5 metal layers.