A 3-Input Universal Logic Gate (Ulg) Using A Single Electron Linear Threshold Gate (Ltg)

2012 16TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE (MELECON)(2012)

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摘要
The Single Electron NanoDevices (SENDs) are attractive candidates for post-CMOS VLSI era mainly due to its very low power consumption. In this paper, the Single Electron (SE) Linear Threshold Gate (LTG) is reviewed. A 3-input Universal Logic Gate (ULG) is proposed. The universality of this gate is demonstrated by showing how to achieve all possible 8 combinations of output logic functions. This is presented by using two versions of the ULG3; i.e., NEG-ULG3 and POS-ULG3. The detailed parameters for all used devices as well as the corresponding SIMON 2.0 simulation results are included.
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关键词
Single Electron (SE),Single Electron Transistor (SET),Single Electron Box (SEB),Single Electron NanoDevices (SENDs),Linear Threshold Gate (LTG),Universal Logic Gate (ULG),Majority Logic Gate (MLG),MINority logic gate (MIN),SIMON 2.0
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