Radiation-enhanced thermal diffusion of transition metal and rare earth ions into II-VI semiconductors

We report on study of gamma radiation-enhanced thermal diffusion of Transition Metal and Rare Earth ions into IIVI semiconductor crystals. ZnSe and ZnS samples with of iron thin film deposited on one facet were sealed in evacuated quartz ampoules at 10(-3) Torr. The crystals were annealed for 14 days at 950 degrees C under gamma-irradiation from 60 Co source. The irradiation dose rates of 43.99 R/s, 1.81 R/s were varied by distance between 60 Co source and furnaces. For comparison, the samples were also annealed without irradiation at the same temperature. The spatial distributions of transition metal were measured by absorption of focused laser radiation at T-5(2)-5E mid-IR transitions of iron ions. In addition, samples of ZnSe were similarly sealed in evacuated quartz ampoules in the presence of Praseodymium metal and annealed at 950 degrees C under 43.99 R/s and 0 R/s and the diffusion lengths and Pr concentrations were compared. The.-irradiation results in better intrusion of the iron ions from the metal film and increase of the diffusion length at similar to 25%, while Praseodymium diffusion is dramatically enhanced by gamma-irradiation during the annealing process.