Fabrication of 32Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology

A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13 mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25 degrees C. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.5V(pp) nonreturn-to-zero pseudorandom modulation signal at -2.3V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.