Effects Of Cvd-W Process On Electrical Properties In Sub 2x Nm Flash Devices
2012 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC)(2012)
Abstract
The physical and electrical properties of chemical vapor deposition (CVD) tungsten (W) are evaluated in terms of W nucleation layer (SiH4 and B2H6 reduction). Moreover effects of W nucleation layer on contact resistance (Rc) for sub 2x nm device are also studied. The results show that electrical properties of W thin films are varied with nucleation layers. Our results reveal that W reductions gases determine the grain sizes of W films which influence both electrical and surface properties of W films. It also has been investigated that effect of boron (B) atoms in B2H6 reduction W layer on P+ Rc. Out-diffused B atoms from P+ junction into silicide layer during post thermal process are compensated by B of B2H6 reduction W layer, which result in no degradation of P+ Rc despite of dopants loss at the contact interfaces. We reveal that tungsten nucleation layers are correlated with physical and electrical properties of W films and device performance.
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Key words
heat treatment,silicon,atomic layer deposition,nucleation,grain size,thin films,chemical vapour deposition,tungsten,chemical vapor deposition,conductivity,contact resistance,films
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