Evolution Of Composition Modulations In Ingaas/Ingaasp Quantum Well Structures Due To Quantum Well Intermixing

Oksana Hulko,D A Thompson,A S W Lee,J G Simmons

2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS（2005）

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Abstract

The presence of the composition modulation affects the quality of thin films and their optical properties. This paper reports on TEM observations of compositional modulations that take place during rapid thermal annealing (RTA) in structures involving InGaAs QWs with InGaAsP barriers with identical In/Ga ratio. A similar compositional behavior was also observed by high resolution X-ray diffraction and photoluminescence measurements.

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Key words

anisotropic magnetoresistance,transistors,thin film,geometrical optics,quantum well,x ray diffraction,thin films,gallium arsenide,transmission electron microscopy,annealing,composite materials,photoluminescence,temperature

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