Growth Of Inp Crystals With Rare-Earth Elements

R. Yatskiv,J. Grym,K. Zdansky,L. Pekarek,J. Zavadil

2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)（2009）

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摘要

We report on the influence of rare earth (RE) elements (Pr, Er, and Dy) addition during vertical Bridgman low pressure synthesis on the properties of InP crystals. The temperature dependent Hall measurement and low-temperature photoluminescence (PL) spectroscopy were employed to study the changes in electrical and optical properties of the crystals. The observed changes are attributed to the gettering effect of REs caused by the high affinity of REs towards shallow impurities in InP.

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关键词

europium,low pressure,erbium,hall effect,silicon,getters,spectroscopy,photoluminescence,gettering,crystals,temperature measurement,dysprosium,praseodymium,impurities

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