Modeling And Simulation Of Tunneling Current In Ultrathin Oxide With The Presence Of Oxide/Silicon Interface Traps

This paper describes a model for the charge tunneling through metal-oxide-semi conductor structures. It includes the tunneling of two-dimensional (2D) electronic gas at the semiconductor/oxide interface and the space charge effects due to the trapped electrons. Trap-assisted tunneling is also considered. The theoretical results are compared to some available experimental data. The theoretical results further predict that there exist of composition spatial fluctuations at the semiconductor-oxide interface.