Research and Application of Ku-band 200W AlGaN/GaN Power HEMT with Four Cells Internal Matching

In this paper, we research the AlGaN/GaN internal matching technology. Using in-house made four 20mm GaN Power HEMT transistors, the internal matching power HEMT demonstrates a pulse over 180W across the band of 13.7-14.5GHz, an output power more than 200W with a power gain of over 6dB, the power added efficiency (PAE) of 30.47% at 14 GHz, operated at 32V drain bias voltage (Vds) with the pulsed conditions at a duty of 10% with a pulse width of 100us. The package size excluding flange and leads is 17.4mm × 24mm. This is the highest output power in a 100W-class AlGaN/GaN HEMT in that such package at Ku-band to the best of our knowledge.