Tuning The Electronic Structure Of Silicene And Germanene By Biaxial Strain And Electric Field

We present a first-principles study of effects of small biaxial strain (vertical bar epsilon vertical bar <= 5%) and perpendicular electric field (E-field) on the electronic and phonon properties of low-buckled silicene and germanene. With an increase of the biaxial strain, the conduction bands at the high-symmetric Gamma and M points of the first Brillouin zone shift significantly towards the Fermi level in both silicene and germanene. In contrast, the E-field changes the band dispersions near the Gamma and open a small band gap at the K point in silicene. We found that the field-induced gap opening in silicene could be enhanced by a compressive strain while mitigated by a tensile strain. This result highlights the tunability of the electronic structure of silicene by combining mechanical strain and electric field.