Sources for Low Energy Extreme of Ion Implantation
AIP CONFERENCE PROCEEDINGS(2008)
摘要
A joint research and development effort focusing on the design of steady state, intense ion sources has been in progress for the past four and a half years. The ultimate goal is to meet the two, energy extreme range needs of megaelectron-volt and 100's of electron-volt ion implanters. This endeavor has resulted in record steady state output currents of higher charge state Antimony and Phosphorous ions: p(2+) (8.6 pmA), p(3+) (1.9 pmA), and p(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb3+ Sb4+, Sb5+, and Sb6+ respectively. During the past year the effort was channeled towards low energy implantation, for which the effort involved molecular ions and a novel plasmaless/gasless deceleration method. To date, 3 emA of positive Decaborane ions were extracted at 14 keV and a smaller current of negative Decaborane ions,were also extracted. Additionally, a Boron fraction of over 70% was extracted from a Bernas-Calutron ion source.
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关键词
ion sources for ion implantation
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